Samsung is reportedly revamping its 6th-generation 1c DRAM design to enhance yield rates, aiming to secure an advantage over its forthcoming HBM4 technology.
Samsung’s Role in HBM4 Success and Memory Business Growth
The Korean tech powerhouse is rethinking its 1c DRAM process, which plays a crucial role in the success of its HBM4 technology. As reported by ZDNet Korea, Samsung has been evaluating its advanced DRAM designs since the second half of 2024. The company has reworked its high-end 1c DRAM, positioning it for widespread adoption, in contrast to the challenges faced by the HBM3 versions, which struggled to gain traction among giants like NVIDIA.
Presently, the cutting-edge DRAM process Samsung employs hasn’t hit the desired yield rates, which are around 60%-70%. This shortfall has prevented the company from moving into mass production. The main issue seems to be the size of the 1c DRAM chip. Initially, Samsung focused on reducing the chip size to boost production volumes, but this led to compromises in process stability and thus, lower yields.
Samsung Electronics has decided to modify the design of its 1c DRAM by increasing the chip size to concentrate on yield improvements, aiming for progress by mid-year. They seem intent on ensuring the stable mass production of their next-gen memory, even if it incurs higher costs.
Source: ZDNet Korea
The 1c DRAM process is vital for Samsung’s HBM4 offerings. While competitors like SK Hynix and Micron have fine-tuned their designs, Samsung is feeling the time crunch. With a reputation slightly tarnished in the industry, especially following the HBM3 missteps, it’s crucial for Samsung to align the 1c DRAM process with industry expectations.
Although the success of Samsung’s 6th-generation DRAM process remains uncertain, developments might emerge in the coming months. This progress could potentially set the stage for mass production of the HBM4 process by year-end.
